欢迎访问ic37.com |
会员登录 免费注册
发布采购

V23990-P541-C29-PM 参数 Datasheet PDF下载

V23990-P541-C29-PM图片预览
型号: V23990-P541-C29-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Industrial drives Embedded drives]
分类和应用:
文件页数/大小: 23 页 / 977 K
品牌: VINCOTECH [ VINCOTECH ]
 浏览型号V23990-P541-C29-PM的Datasheet PDF文件第1页浏览型号V23990-P541-C29-PM的Datasheet PDF文件第2页浏览型号V23990-P541-C29-PM的Datasheet PDF文件第4页浏览型号V23990-P541-C29-PM的Datasheet PDF文件第5页浏览型号V23990-P541-C29-PM的Datasheet PDF文件第6页浏览型号V23990-P541-C29-PM的Datasheet PDF文件第7页浏览型号V23990-P541-C29-PM的Datasheet PDF文件第8页浏览型号V23990-P541-C29-PM的Datasheet PDF文件第9页  
V23990-P541-*2*-PM  
Characteristic Values  
Conditions  
Value  
Typ  
Parameter  
Symbol  
Unit  
Vr [V] or  
VGE [V] or  
IC [A] or  
IF [A] or  
ID [A]  
VCE [V] or  
Tj  
Min  
Max  
VGS [V]  
VDS [V]  
Input Rectifier Diode  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=145°C  
0,8  
1,26  
1,24  
0,92  
0,82  
11  
1,45  
VF  
Vto  
rt  
Forward voltage  
30  
30  
30  
V
V
Threshold voltage (for power loss calc. only)  
Slope resistance (for power loss calc. only)  
Reverse current  
m  
mA  
14  
Ir  
1500  
1,1  
Thermal grease  
RthJH  
Thermal resistance chip to heatsink per chip  
thickness50µm  
λ = 1 W/mK  
2,10  
K/W  
Inverter Transistor  
Gate emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off current incl. Diode  
Gate-emitter leakage current  
Integrated Gate resistor  
Turn-on delay time  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
5
1
5,8  
6,5  
2,1  
VGE(th) VCE=VGE  
0,00009  
6
V
V
1,52  
1,7  
VCE(sat)  
ICES  
IGES  
Rgint  
td(on)  
tr  
15  
0
0,06  
350  
600  
0
mA  
nA  
20  
none  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
12  
10  
8
Rise time  
11  
ns  
118  
134  
87  
116  
0,07  
0,10  
0,15  
0,19  
td(off)  
tf  
Turn-off delay time  
Rgoff=16 ꢀ  
Rgon=32 ꢀ  
±15  
300  
6
Fall time  
Eon  
Turn-on energy loss per pulse  
Turn-off energy loss per pulse  
Input capacitance  
mWs  
pF  
Eoff  
Cies  
Coss  
Crss  
QGate  
368  
Output capacitance  
f=1MHz  
0
25  
Tj=25°C  
Tj=25°C  
28  
Reverse transfer capacitance  
Gate charge  
11  
±15  
480  
6
42  
nC  
Thermal grease  
thickness50µm  
λ = 1 W/mK  
RthJH  
Thermal resistance chip to heatsink per chip  
2,78  
K/W  
Inverter Diode  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
1
1,64  
1,56  
8
8
73  
163  
0,23  
0,43  
569  
338  
0,04  
0,09  
2,5  
VF  
IRRM  
trr  
Diode forward voltage  
6
6
V
A
Peak reverse recovery current  
Reverse recovery time  
ns  
Qrr  
Reverse recovered charge  
Peak rate of fall of recovery current  
Reverse recovered energy  
Rgon=32 ꢀ  
300  
µC  
di(rec)max  
/dt  
A/µs  
mWs  
Erec  
Thermal grease  
thickness50µm  
λ = 1 W/mK  
RthJH  
Thermal resistance chip to heatsink per chip  
3,68  
K/W  
Revision: 4  
copyright Vincotech  
3
 复制成功!