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V23990-P541-C29-PM 参数 Datasheet PDF下载

V23990-P541-C29-PM图片预览
型号: V23990-P541-C29-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Industrial drives Embedded drives]
分类和应用:
文件页数/大小: 23 页 / 977 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-P541-*2*-PM  
Brake  
Figure 5  
Brake IGBT  
Figure 6  
Brake IGBT  
Typical switching energy losses  
as a function of collector current  
E = f(IC)  
Typical switching energy losses  
as a function of gate resistor  
E = f(RG)  
0,25  
0,4  
Eoff  
Eon  
Eoff  
Eon  
Tj = Tjmax -25°C  
0,20  
0,3  
Eon  
Eon  
0,15  
Tj = Tjmax -25°C  
0,2  
Eoff  
0,10  
0,05  
0,00  
Eoff  
Tj = 25°C  
0,1  
Tj = 25°C  
0,0  
0
2
4
6
8
10  
12  
0
50  
100  
150  
200  
250  
300  
R G ( )  
I C (A)  
With an inductive load at  
With an inductive load at  
Tj =  
VCE  
VGE  
25/125  
300  
15  
Tj =  
VCE  
VGE  
25/125  
300  
15  
°C  
V
°C  
=
=
=
=
V
V
A
V
Rgon  
Rgoff  
=
=
IC =  
32  
6
16  
Figure 7  
Brake FWD  
Figure 8  
Brake FWD  
Typical reverse recovery energy loss  
as a function of collector current  
Erec = f(IC)  
Typical reverse recovery energy loss  
as a function of gate resistor  
Erec = f(RG)  
0,10  
0,12  
Erec  
Tj = Tjmax -25°C  
0,10  
0,08  
0,08  
Erec  
Tj = Tjmax - 25°C  
0,06  
Tj = 25°C  
0,06  
Erec  
0,04  
0,02  
0,00  
0,04  
Erec  
Tj = 25°C  
0,02  
0,00  
0
50  
100  
150  
200  
250  
300  
)
0
2
4
6
8
10  
12  
I C (A)  
R G  
(
With an inductive load at  
With an inductive load at  
Tj =  
VCE  
VGE  
25/125  
300  
15  
Tj =  
VCE  
VGE  
25/125  
300  
15  
°C  
V
°C  
V
V
A
=
=
=
=
V
Rgon  
=
IC =  
32  
6
Revision: 4  
copyright Vincotech  
14  
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