V23990-K429-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 6
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
30
25
20
15
10
5
30
25
20
15
10
5
Eon High T
Eon Low T
Eon High T
Eoff High T
Eon Low T
Eoff High T
Eoff Low T
Eoff Low T
0
0
I
C (A)
R G ( Ω )
0
30
60
90
120
150
0
4
8
12
16
20
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
V
A
25/150
25/150
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
4
600
±15
75
V
Rgon
Rgoff
=
=
ꢁ
ꢁ
4
Figure 7
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 8
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
7,5
7,5
Erec
Tj = Tjmax -25°C
6
4,5
3
6
Tj = Tjmax -25°C
Erec
4,5
Erec
3
Tj = 25°C
Tj = 25°C
Erec
1,5
0
1,5
0
I C (A)
R G ( Ω )
0
25
50
75
100
125
150
0
4
8
12
16
20
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
25/150
600
±15
4
Tj =
VCE
VGE
IC =
25/150
600
°C
°C
V
V
A
=
=
=
=
V
V
ꢁ
±15
Rgon
=
75
copyright Vincotech
5
Revision: 5.1