V23990-K429-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 25
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 26
T1,T2,T3,T4,T5,T6,T7 IGBT
Gate voltage vs Gate charge
Safe operating area as a function
of collector-emitter voltage
IC = f(VCE
)
VGE = f(QGE
16
)
103
10uS
14
12
10
8
100uS
102
240V
960V
1mS
10mS
100mS
DC
101
100
6
4
10-1
2
0
0
50
100
150
200
250
300
350
Q g (nC)
400
100
102
103
101
VCE (V)
At
At
IC
=
D =
Th =
75
A
single pulse
80
ºC
V
VGE
Tj =
=
±15
Tjmax
ºC
copyright Vincotech
10
Revision: 5.1