V23990-K429-A60-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 14
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
30
25
20
15
10
5
30
25
20
15
10
5
Qrr
Qrr
Qrr
Qrr
0
0
0
0
25
50
75
100
125
I C (A)
150
8
16
24
32
40
R
gon ( Ω)
At
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
°C
°C
V
A
V
25/150
600
±15
8
25/150
600
=
V
V
ꢀ
=
75
Rgon
=
VGE =
±15
Figure 15
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 16
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
200
160
120
80
200
160
120
80
IRRM
IRRM
40
40
IRRM
IRRM
0
0
0
8
16
24
32
R gon ( Ω )
40
0
25
50
75
100
125 I C (A)
150
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
°C
V
°C
V
A
V
25/150
600
±15
8
25/150
=
=
600
75
V
Rgon
=
VGE =
ꢀ
±15
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7
Revision: 1.1
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