V23990-K429-A60-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 6
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
15
12
9
15
12
9
Eon High T
Eon High T
Eoff High T
Eon Low T
Eon Low T
Eoff High T
6
6
Eoff Low T
Eoff Low T
3
3
0
0
0
8
16
24
32
40
0
25
50
75
100
125
150
I C (A)
R G ( Ω )
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
°C
V
V
A
25/150
25/150
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
8
V
V
ꢀ
ꢀ
600
±15
75
Rgon
Rgoff
=
=
8
Figure 7
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 8
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
12
10
8
12
10
8
Erec
Erec
6
6
4
4
Erec
Erec
2
2
0
0
0
8
16
24
32
40
0
25
50
75
100
125
150
I C (A)
R G ( Ω )
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
°C
V
V
A
25/150
25/150
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
8
V
V
ꢀ
600
±15
75
Rgon
=
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5
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