V23990-K429-A60-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
D8,D9,D10,D11,D12,D13
Forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=145°C
1
1,09
1,02
0,88
0,74
4,0
1,8
VF
Vto
rt
50
50
50
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
mꢀ
mA
6,0
Ir
1600
1,1
Thermal grease
RthJH
Thermal resistance chip to heatsink per chip
thickness≤50um
λ = 1 W/mK
0,90
K/W
T1,T2,T3,T4,T5,T6,T7
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5,4
1
6
6,6
2,4
0,3
500
VGE(th) VCE=VGE
0,0075
75
V
V
1,82
2,18
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
1200
0
mA
nA
ꢀ
20
none
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
83
82
15
Rise time
18
ns
157
204
60
td(off)
tf
Turn-off delay time
Rgoff=8 ꢀ
Rgon=8 ꢀ
±15
600
75
Fall time
96
3,29
5,73
4,07
6,78
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
7500
1500
130
Output capacitance
f=1MHz
0
10
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
±15
600
75
175
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
0,63
K/W
D1,D2,D3,D4,D5,D6,D7
Diode forward voltage
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1
2,67
2,18
54
3,4
VF
IRRM
trr
75
75
V
A
Peak reverse recovery current
Reverse recovery time
73
276
602
5,46
15,61
1767
625
2,38
7,29
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgon=8 ꢀ
±15
600
µC
di(rec)max
/dt
A/µs
mWs
Erec
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
0,75
K/W
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R
Tj=25°C
Tc=100°C
Tc=100°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
1000
ꢀ
%
∆R/R R100=1670 ꢀ
-3
3
P
1670,3
ꢀ
mW/K
1/K
1/K²
7,635*10-3
1,731*10-5
B(25/50)
Tol. %
Tol. %
B(25/100)
B-value
Vincotech NTC Reference
E
Copyright by Vincotech
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Revision: 1.1