V23990-K428-A60-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
D8,D9,D10,D11,D12,D13
Forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=°C
1
1,09
1,02
0,90
0,74
4,00
6,00
1,8
VF
Vto
rt
50
50
50
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
mꢀ
mA
Tj=25°C
Tj=145°C
Ir
1600
1,1
Thermal grease
RthJH
Thermal resistance chip to heatsink per chip
thickness≤50um
λ = 1 W/mK
0,90
K/W
T1,T2,T3,T4,T5,T6,T7
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5,4
1
6
6,6
2,3
VGE(th) VCE=VGE
0,005
50
V
V
1,79
2,12
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
0,25
500
1200
0
mA
nA
ꢀ
20
none
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
106
104
28
Rise time
31
ns
157
205
58
td(off)
tf
Turn-off delay time
Rgoff=16 ꢀ
Rgon=16 ꢀ
±15
600
50
Fall time
89
2,61
4,39
2,49
4,09
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
5000
1000
80
Output capacitance
f=1MHz
0
10
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
±15
600
50
117
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
0,75
K/W
D1,D2,D3,D4,D5,D6,D7
Diode forward voltage
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1
2,73
2,18
33
3,4
VF
IRRM
trr
50
50
V
A
Peak reverse recovery current
Reverse recovery time
45
388
727
4,01
10,81
1018
295
1,84
5,14
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgon=16 ꢀ
±15
600
µC
di(rec)max
/dt
A/µs
mWs
Erec
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
0,93
K/W
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R
T=25°C
T=100°C
T=100°C
T=25°C
T=25°C
T=25°C
1000
1670
ꢀ
%
∆R/R R100=1670 ꢀ
-3
3
P
ꢀ
mW/K
1/K
1/K²
7,635*10-3
1,731*10-5
B(25/50)
B(25/100)
B-value
Vincotech NTC Reference
E
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Revision: 1.1
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