V23990-K428-A40-PM
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 5
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 6
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
10
10
Eon High T
Eon High T
8
8
Eoff High T
6
6
Eon Low T
Eon Low T
Eoff High T
Eoff Low T
4
4
Eoff Low T
2
2
0
0
I C (A)
R G ( Ω )
0
20
40
60
80
100
0
8
16
24
32
40
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
V
A
25/150
25/150
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
8
600
±15
50
V
Rgon
Rgoff
=
=
ꢀ
ꢀ
8
Figure 7
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 8
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
5
4
3
2
1
0
5
4
3
2
1
0
Erec
Erec
Erec
Erec
I C (A)
R G ( Ω )
0
20
40
60
80
100
0
8
16
24
32
40
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
V
A
25/150
25/150
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
8
600
±15
50
V
Rgon
=
ꢀ
copyright Vincotech
5
Revision: 4.1