V23990-K420-A60-PM
target datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
Input Rectifier Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
0,8
0,97
0,88
0,85
0,71
3,5
1,35
VF
Vto
rt
Forward voltage
35
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
mꢀ
mA
4,7
0,1
1,1
Ir
1500
Thermal grease
RthJH
thickness≤50ꢁm
λ = 1W/mK
K/W
Thermal resistance chip to heatsink per chip
0,70
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5,4
6
6,6
2,15
0,34
500
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
0,01
100
V
V
1,7
1,95
15
0
600
0
mA
nA
ꢀ
20
-
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
300
200
600
300
Rise time
ns
td(off)
tf
Turn-off delay time
Rgoff=6,2 ꢀ
Rgon=6,2 ꢀ
±15
600
100
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
nF
Eoff
Cies
Coss
Crss
QGate
10000
1000
170
Output capacitance
f=1MHz
0
10
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
±15
tbd
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
0,52
Inverter Diode
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
2,5
2
3,3
VF
IRRM
trr
Diode forward voltage
100
V
A
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
Peak reverse recovery current
Reverse recovery time
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgon=tbd ꢀ
µC
di(rec)max
/dt
A/µs
mWs
Erec
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
0,66
Thermistor
Rated resistance
Deviation of R100
Power dissipation
B-value
R
T=25°C
T=100°C
T=25°C
T=25°C
T=25°C
1000
ꢀ
%
∆R/R R100=1486 ꢀ
-3
3
P
1670,313
7,635*10-3
1,731*10-5
mW
K
B(25/50)
Tol. ±3%
Tol. ±3%
B(25/100)
B-value
K
Vincotech NTC Reference
E
copyright by Vincotech
3
Revision: 1
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