V23990-K420-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 17
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 18
D1,D2,D3,D4,D5,D6,D7 FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
5000
5000
dI0/dt
dI0/dt
µ
µ
µ
µ
dIrec/dt
dIrec/dt
4000
3000
2000
1000
0
4000
3000
dIrec/dtLow T
Tj = 25°C
dIo/dtLow T
2000
Tj = Tjmax - 25°C
di0/dtHigh T
1000
dIrec/dtHigh T
dIrec/dtHigh T
0
I C (A)
R gon ( Ω )
0
50
100
150
200
0
4
8
12
16
20
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
°C
V
25/150
600
°C
V
A
V
=
=
600
±15
4
V
100
Rgon
=
VGE =
ꢀ
±15
Figure 19
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 20
D1,D2,D3,D4,D5,D6,D7 FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
100
10-1
10-1
D = 0,5
0,2
D = 0,5
0,2
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-2
10-5
10-4
10-3
10-2
10-1
100
1011
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
1011
At
At
tp / T
0,48
tp / T
0,66
D =
D =
RthJH
=
RthJH =
K/W
K/W
IGBT thermal model values
FWD thermal model values
R (C/W)
0,08
Tau (s)
1,1E+00
1,8E-01
6,5E-02
1,0E-02
1,2E-03
R (C/W)
0,04
Tau (s)
2,7E+00
5,0E-01
1,4E-01
3,9E-02
9,9E-03
0,21
0,12
0,13
0,28
0,05
0,13
0,00
0,09
copyright Vincotech
9
Revision: 2.1
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