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V23990-K420-A40-0B-PM 参数 Datasheet PDF下载

V23990-K420-A40-0B-PM图片预览
型号: V23990-K420-A40-0B-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Solderless interconnection]
分类和应用:
文件页数/大小: 18 页 / 1854 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-K420-A40-PM  
Characteristic Values  
Conditions  
Value  
Typ  
Parameter  
Symbol  
Unit  
Vr [V] or  
VGE [V] or  
IC [A] or  
IF [A] or  
ID [A]  
VCE [V] or  
Tj  
Min  
Max  
VGS [V]  
VDS [V]  
D8,D9,D10,D11,D12,D13  
Forward voltage  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
0,8  
0,97  
0,88  
0,85  
0,71  
0,0035  
0,0047  
1,35  
VF  
Vto  
rt  
35  
V
V
Threshold voltage (for power loss calc. only)  
Slope resistance (for power loss calc. only)  
Reverse current  
0,1  
1,1  
Ir  
1500  
mA  
Thermal grease  
RthJH  
thickness50m  
λ=1W/mK  
K/W  
Thermal resistance chip to heatsink per chip  
0,7  
T1,T2,T3,T4,T5,T6,T7  
Gate emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off current incl. Diode  
Gate-emitter leakage current  
Integrated Gate resistor  
Turn-on delay time  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
5
5,8  
6,5  
2,2  
VGE(th) VCE=VGE  
0,0038  
100  
V
V
1,6  
1,92  
2,33  
VCE(sat)  
ICES  
IGES  
Rgint  
td(on)  
tr  
15  
0
0,12  
600  
1200  
0
mA  
nA  
20  
7,5  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
204  
216  
35  
Rise time  
42  
ns  
296  
384  
78  
112  
7,83  
12,12  
5,72  
9,25  
td(off)  
tf  
Turn-off delay time  
Rgoff=4ꢀ  
Rgon=4ꢀ  
±15  
600  
100  
Fall time  
Eon  
Turn-on energy loss per pulse  
Turn-off energy loss per pulse  
Input capacitance  
mWs  
pF  
Eoff  
Cies  
Coss  
Crss  
QGate  
6150  
405  
345  
800  
Output capacitance  
f=1MHz  
0
25  
Tj=25°C  
Tj=25°C  
Reverse transfer capacitance  
Gate charge  
±15  
nC  
Thermal grease  
thickness50m  
λ=1W/mK  
RthJH  
K/W  
Thermal resistance chip to heatsink per chip  
0,48  
D1,D2,D3,D4,D5,D6,D7  
Diode forward voltage  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
1,5  
2,47  
2,46  
68,3  
91,3  
267  
2,7  
VF  
IRRM  
trr  
100  
100  
V
A
Peak reverse recovery current  
Reverse recovery time  
ns  
455  
5,69  
15,08  
2761  
977  
1,87  
5,42  
Qrr  
Reverse recovered charge  
Peak rate of fall of recovery current  
Reverse recovered energy  
Rgon=4ꢀ  
±15  
600  
µC  
di(rec)max  
/dt  
A/µs  
mWs  
Erec  
Thermal grease  
thickness50m  
λ=1W/mK  
RthJH  
K/W  
Thermal resistance chip to heatsink per chip  
0,66  
copyright Vincotech  
3
Revision: 2.1