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V23990-K249-A-1B-PM 参数 Datasheet PDF下载

V23990-K249-A-1B-PM图片预览
型号: V23990-K249-A-1B-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [IGBT3 technology for low saturation losses]
分类和应用: 双极性晶体管
文件页数/大小: 17 页 / 2155 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-K249-A-PM  
Characteristic Values  
Conditions  
Value  
Typ  
Parameter  
Symbol  
Unit  
Vr [V] or  
VGE [V] or  
IC [A] or  
IF [A] or  
ID [A]  
VCE [V] or  
Tj  
Min  
Max  
VGS [V]  
VDS [V]  
D8,D9,D10,D11,D12,D13  
Forward voltage  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
0,8  
1,02  
0,94  
0,88  
0,75  
4
1,35  
VF  
Vto  
rt  
35  
35  
35  
V
V
Threshold voltage (for power loss calc. only)  
Slope resistance (for power loss calc. only)  
Reverse current  
m  
mA  
6
0,1  
2
Ir  
1500  
Thermal grease  
RthJH  
Thermal resistance chip to heatsink per chip  
thickness50um  
λ = 1 W/mK  
0,90  
K/W  
T1,T2,T3,T4,T5,T6,T7  
Gate emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off current incl. Diode  
Gate-emitter leakage current  
Integrated Gate resistor  
Turn-on delay time  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
5
5,8  
6,5  
2,15  
0,005  
300  
VGE(th) VCE=VGE  
0,002  
50  
V
V
1,35  
1,66  
1,87  
VCE(sat)  
ICES  
IGES  
Rgint  
td(on)  
tr  
15  
0
1200  
0
mA  
nA  
20  
4
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
66  
23  
Rise time  
ns  
td(off)  
tf  
Turn-off delay time  
Rgoff=18 ꢀ  
Rgon=18 ꢀ  
492  
205  
5,48  
±15  
600  
50  
Fall time  
Eon  
Turn-on energy loss per pulse  
Turn-off energy loss per pulse  
Input capacitance  
mWs  
pF  
Eoff  
5,47  
Cies  
Coss  
Crss  
QGate  
3700  
Output capacitance  
f=1MHz  
0
25  
Tj=25°C  
Tj=25°C  
800  
700  
360  
Reverse transfer capacitance  
Gate charge  
±15  
960  
50  
nC  
Thermal grease  
thickness50um  
λ = 1 W/mK  
RthJH  
Thermal resistance chip to heatsink per chip  
0,55  
K/W  
D1,D2,D3,D4,D5,D6,D7  
Diode forward voltage  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
1,3  
1,57  
1,56  
1,9  
VF  
IRRM  
trr  
50  
50  
V
A
Peak reverse recovery current  
Reverse recovery time  
95  
ns  
455  
Qrr  
Reverse recovered charge  
Peak rate of fall of recovery current  
Reverse recovered energy  
Rgon=18 ꢀ  
600  
µC  
12,5  
2833  
5,17  
di(rec)max  
/dt  
A/µs  
mWs  
Erec  
Thermal grease  
thickness50um  
λ = 1 W/mK  
RthJH  
Thermal resistance chip to heatsink per chip  
1
K/W  
Thermistor  
Rated resistance  
Deviation of R100  
R100  
R
T=25°C  
T=100°C  
T=100°C  
T=25°C  
T=25°C  
T=25°C  
1000  
%
R/R R100=1670 ꢀ  
-3  
3
P
1670,313  
Power dissipation constant  
A-value  
mW/K  
1/K  
1/K²  
B(25/50) Tol. %  
B(25/100) Tol. %  
7,635*10-3  
1,731*10-5  
B-value  
Vincotech NTC Reference  
E
Copyright by Vincotech  
3
Revision: 2.1