V23990-K229-A41-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 17
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 18
D1,D2,D3,D4,D5,D6,D7 FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
1000
3500
dI0/dt
dI0/dt
µ
µ
µ
µ
dIrec/dt
dIrec/dt
800
600
400
200
0
2800
2100
1400
dIo/dtLow T
di0/dtHigh T
Tj = 25°C
700
dIrec/dtLow T
dIrec/dtHigh T
Tj = Tjmax - 25°C
dIrec/dtHigh T
0
I C (A)
R gon ( Ω )
0
10
20
30
40
50
0
30
60
90
120
150
At
At
Tj =
VCE
Tj =
25/150
600
°C
V
25/150
600
°C
V
A
V
=
VR =
IF =
VGE
=
±15
V
25
Rgon
=
VGE =
32
ꢀ
±15
Figure 19
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 20
D1,D2,D3,D4,D5,D6,D7 FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-2
10-4
10-3
10-2
10-1
100
1011
10-5
10-4
10-3
10-2
10-1
100
1011
t p (s)
t p (s)
At
At
tp / T
1,2
tp / T
1,52
D =
D =
RthJH
=
RthJH =
K/W
K/W
IGBT thermal model values
FWD thermal model values
R (C/W)
0,03
Tau (s)
5,7E+00
8,1E-01
1,6E-01
4,9E-02
1,0E-02
9,8E-04
R (C/W)
0,03
Tau (s)
9,3E+00
7,6E-01
1,5E-01
3,0E-02
4,4E-03
6,5E-04
0,13
0,22
0,45
0,63
0,24
0,37
0,15
0,17
0,06
0,10
copyright Vincotech
9
Revision: 4.1
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