V23990-K229-A40-PM
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 5
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 6
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
8
6
4
2
0
8
6
4
2
0
Eon High T
Eon High T
Eon Low T
Eon Low T
Eoff High T
Eoff High T
Eoff Low T
Eoff Low T
I C (A)
R G ( Ω )
0
10
20
30
40
50
0
30
60
90
120
150
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
V
A
25/150
25/150
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
32
600
±15
25
V
Rgon
Rgoff
=
=
ꢁ
ꢁ
32
Figure 7
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 8
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
2
2
Erec
Tj = Tjmax -25°C
1,6
1,6
Tj = Tjmax -25°C
1,2
1,2
0,8
0,4
0
Erec
0,8
Erec
Tj = 25°C
Tj = 25°C
Erec
0,4
0
I C (A)
R G ( Ω )
0
10
20
30
40
50
0
30
60
90
120
150
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
V
A
25/150
25/150
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
32
600
±15
25
V
Rgon
=
ꢁ
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5
Revision: 4.1
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