V23990-K229-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 14
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
10
10
Qrr
8
8
6
4
2
6
Qrr
4
2
0
0
0
I C (A)
R g on ( Ω)
0
10
20
30
40
50
20
40
60
80
At
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
125
600
±15
36
°C
V
125
600
25
°C
V
A
V
=
=
V
Rgon
=
VGE =
ꢀ
±15
Figure 15
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 16
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
40
35
30
25
20
15
10
5
40
IRRM
35
30
25
20
15
10
5
IRRM
0
0
0
I C (A)
R gon ( Ω )
75
0
10
20
30
40
50
15
30
45
60
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
125
600
±15
36
°C
V
125
°C
=
600
25
V
A
V
=
V
Rgon
=
VGE =
ꢀ
±15
copyright Vincotech
7
Revision: 3.1
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