V23990-K223-A-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
T1,T2,T3,T4,T5,T6,T7
Collector-emitter break down voltage
DC collector current
VCE
IC
600
V
A
Th=80°C
Tc=80°C
Tj=Tjmax
53
150
ICpulse
tp limited by Tjmax
Repetitive peak collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
A
VCE ≤ 600V, Tj ≤ Top max
75
A
Th=80°C
Tc=80°C
Ptot
Tj=Tjmax
100
±20
W
V
VGE
tSC
Tj≤150°C
6
µs
V
VCC
VGE=15V
360
Tjmax
Maximum Junction Temperature
175
°C
D1,D2,D3,D4,D5,D6,D7
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
IFRM
Ptot
600
V
A
Th=80°C
Tc=80°C
Tj=Tjmax
40
32
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
A
Th=80°C
Tc=80°C
59
W
°C
Tjmax
175
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
-40…+(Tjmax - 25)
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Vis
t=2s
DC voltage
4000
V
min 12,7
min 12,7
mm
mm
Copyright by Vincotech
2
Revision: 3.1