V23990-K222-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 25
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 26
T1,T2,T3,T4,T5,T6,T7 IGBT
Gate voltage vs Gate charge
Safe operating area as a function
of collector-emitter voltage
IC = f(VCE
)
VGE = f(QGE
15
)
103
120V
480V
12
9
102
101
100
1uS
10uS
100uS
1mS
100mS
10mS
DC
6
3
0
0
10-1
100
40
80
120
160
200
240
g (nC)
103
VCE (V)
Q
101
102
At
At
IC
=
D =
Th =
30
A
single pulse
80
ºC
VGE
Tj =
=
±15
V
Tjmax
ºC
Copyright by Vincotech
10
Revision: 3.1