V23990-K220-A40-PM
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 17
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 18
D1,D2,D3,D4,D5,D6,D7 FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
4800
3000
dI0/dt
dI0/dt
µ
µ
µ
µ
dIrec/dt
dIrec/dt
4000
3200
2400
1600
800
2500
2000
1500
1000
500
dIrec/dtLow T
dIrec/dtHigh T
dIo/dtLow T
di0/dtHigh T
C (A)
0
0
I
R gon ( Ω )
0
15
30
45
60
75
0
15
30
45
60
75
At
At
Tj =
VCE
VGE
Tj =
25/150
°C
25/150
600
°C
V
A
V
=
=
VR =
600
±15
8
V
V
ꢁ
IF =
VGE
35
Rgon
=
=
±15
Figure 19
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 20
D1,D2,D3,D4,D5,D6,D7 FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-2
t p (s)
t p (s)
10-4
10-3
10-2
10-1
100
10110
10-5
10-4
10-3
10-2
10-1
100
10110
At
At
tp / T
1
tp / T
1,2
D =
D =
RthJH
=
RthJH =
K/W
K/W
IGBT thermal model values
FWD thermal model values
R (C/W)
0,10
Tau (s)
1,5E+00
2,7E-01
8,9E-02
1,4E-02
2,8E-03
R (C/W)
0,08
Tau (s)
2,1E+00
2,4E-01
6,6E-02
1,3E-02
2,3E-03
0,31
0,33
0,41
0,50
0,13
0,22
0,03
0,10
copyright Vincotech
8
Revision: 3.1
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