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V23990-K220-A40-1A-PM 参数 Datasheet PDF下载

V23990-K220-A40-1A-PM图片预览
型号: V23990-K220-A40-1A-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Trench Fieldstop IGBT4 technology]
分类和应用: 双极性晶体管
文件页数/大小: 17 页 / 1779 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-K220-A40-PM  
Characteristic Values  
Conditions  
Value  
Typ  
Parameter  
Symbol  
Unit  
Vr [V] or  
VGE [V] or  
IC [A] or  
IF [A] or  
ID [A]  
VCE [V] or  
Tj  
Min  
Max  
VGS [V]  
VDS [V]  
D8,D9,D10,D11,D12,D13  
Forward voltage  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
0,8  
1,08  
1,03  
0,89  
0,78  
7,56  
10,20  
1,35  
VF  
Vto  
rt  
25  
V
V
Threshold voltage (for power loss calc. only)  
Slope resistance (for power loss calc. only)  
Reverse current  
m  
mA  
0,01  
1,1  
Ir  
1500  
Thermal grease  
RthJH  
thickness50m  
λ=1W/mK  
K/W  
Thermal resistance chip to heatsink per chip  
1,25  
T1,T2,T3,T4,T5,T6,T7  
Gate emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off current incl. diode  
Gate-emitter leakage current  
Integrated Gate resistor  
Turn-on delay time  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
5
5,8  
6,5  
2,15  
0,05  
300  
VGE(th) VCE=VGE  
0,0012  
35  
V
V
1,6  
1,87  
2,3  
VCE(sat)  
ICES  
IGES  
Rgint  
td(on)  
tr  
15  
0
1200  
0
mA  
nA  
20  
-
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
78  
79  
24  
Rise time  
29  
ns  
196  
268  
77  
131  
2,54  
3,84  
1,92  
3,18  
td(off)  
tf  
Turn-off delay time  
Rgoff=16ꢁ  
Rgon=16ꢁ  
±15  
600  
35  
Fall time  
Eon  
Turn-on energy loss per pulse  
Turn-off energy loss per pulse  
Input capacitance  
mWs  
pF  
Eoff  
Cies  
Coss  
Crss  
QGate  
1950  
155  
115  
192  
Output capacitance  
f=1MHz  
0
25  
Tj=25°C  
Tj=25°C  
Reverse transfer capacitance  
Gate charge  
Vcc=960V  
15  
40  
nC  
Thermal grease  
thickness50m  
λ=1W/mK  
RthJH  
K/W  
Thermal resistance chip to heatsink per chip  
1
D1,D2,D3,D4,D5,D6,D7  
Diode forward voltage  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
1,5  
2,36  
2,34  
16  
22,6  
336  
550  
2,2  
5,36  
63  
67  
2,65  
VF  
IRRM  
trr  
35  
35  
V
A
Peak reverse recovery current  
Reverse recovery time  
ns  
Qrr  
Reverse recovered charge  
Peak rate of fall of recovery current  
Reverse recovered energy  
Rgon=16ꢁ  
±15  
600  
µC  
di(rec)max  
/dt  
A/µs  
mWs  
0,77  
2,07  
Erec  
Thermal grease  
thickness50m  
λ=1W/mK  
RthJH  
K/W  
Thermal resistance chip to heatsink per chip  
1,2  
Thermistor  
Rated resistance  
Deviation of R100  
R100  
R
T=25°C  
T=100°C  
T=100°C  
T=25°C  
T=25°C  
T=25°C  
1000  
%
R/R R100=1670 ꢁ  
-3  
3
P
1670,313  
Power dissipation constant  
A-value  
mW/K  
1/K  
1/K²  
B(25/50) Tol. %  
B(25/100) Tol. %  
7,635*10-3  
1,731*10-5  
B-value  
Vincotech NTC Reference  
E
copyright Vincotech  
3
Revision: 3.1