V23990-K209-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
FWD
Figure 14
FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
2
2
Qrr
1,6
1,6
1,2
0,8
0,4
Tj = Tjmax -25°C
Qrr
Tj = Tjmax -25°C
1,2
Qrr
0,8
Tj = 25°C
Tj = 25°C
Qrr
0,4
0
0
0
I C (A)
R g on ( Ω)
300
0
3
6
9
12
15
50
100
150
200
250
At
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
600
°C
V
25/150
600
8
°C
V
A
V
=
=
±15
V
Rgon
=
VGE =
64
Ǒ
±15
Figure 15
FWD
Figure 16
FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
10
10
8
6
4
2
8
Tj = Tjmax -25°C
IRRM
6
IRRM
Tj = Tjmax - 25°C
IRRM
4
Tj = 25°C
IRRM
Tj = 25°C
2
0
0
0
I C (A)
R gon ( Ω )
300
50
100
150
200
250
0
3
6
9
12
15
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
600
°C
V
25/150
600
8
°C
=
=
V
A
V
±15
V
Rgon
=
VGE =
64
Ǒ
±15
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7
Revision: 4.2
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