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V23990-K202-A-PM 参数 Datasheet PDF下载

V23990-K202-A-PM图片预览
型号: V23990-K202-A-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Trench Fieldstop IGBT3 technology]
分类和应用: 双极性晶体管
文件页数/大小: 17 页 / 2044 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-K202-A-PM  
datasheet  
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7  
Figure 9  
IGBT  
Figure 10  
IGBT  
Typical switching times as a  
function of collector current  
t = f(IC)  
Typical switching times as a  
function of gate resistor  
t = f(RG)  
1
1
tdoff  
tdoff  
tf  
tf  
0,1  
0,1  
tdon  
tr  
tr  
tdon  
0,01  
0,01  
0,001  
0,001  
I
(A)  
R G ( )  
150  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
0
25  
50  
75  
100  
125  
C
With an inductive load at  
With an inductive load at  
Tj =  
VCE  
VGE  
Tj =  
VCE  
VGE  
IC =  
125  
300  
15  
°C  
V
125  
300  
15  
°C  
=
=
=
=
V
V
A
V
Rgon  
Rgoff  
=
=
32  
10  
16  
Figure 11  
FWD  
Figure 12  
Typical reverse recovery time as a  
function of IGBT turn on gate resistor  
FWD  
Typical reverse recovery time as a  
function of collector current  
trr = f(IC)  
trr = f(Rgon  
)
0,5  
0,4  
0,3  
0,2  
0,1  
0
0,4  
trr  
Tj = Tjmax -25°C  
trr  
Tj = Tjmax -25°C  
0,3  
0,2  
0,1  
trr  
Tj = 25°C  
trr  
Tj = 25°C  
0
0
25  
50  
75  
100  
125  
150  
I C (A)  
R g on  
(
)
0
5
10  
15  
20  
At  
At  
Tj =  
VCE  
VGE  
Tj =  
VR =  
IF =  
°C  
V
°C  
25/125  
300  
15  
25/125  
300  
10  
=
=
V
A
V
V
Rgon  
=
VGE =  
32  
15  
copyright Vincotech  
6
Revision: 3