V23990-K202-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 17
FWD
Figure 18
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
800
1200
dI0/dt
dI0/dt
µ
µ
µ
µ
dIrec/dt
dIrec/dt
600
400
200
0
900
600
300
0
I C (A)
R gon ( Ω )
150
0
5
10
15
20
0
25
50
75
100
125
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
°C
V
°C
V
A
V
25/125
300
15
25/125
300
10
=
=
V
Rgon
=
VGE =
32
ꢀ
15
Figure 19
IGBT
Figure 20
FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
D = 0,5
0,2
0,2
0,1
10-1
10-1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-2
10-5
10-4
10-3
10-2
10-1
100
1011
10-4
10-3
10-2
10-1
100
1011
t p (s)
t p (s)
At
At
tp / T
2,0
tp / T
2,5
D =
D =
RthJH
=
RthJH =
K/W
K/W
IGBT thermal model values
FWD thermal model values
R (K/W)
0,04
Tau (s)
5,9E+00
5,2E-01
7,5E-02
1,8E-02
2,8E-03
2,7E-04
R (K/W)
0,05
Tau (s)
9,0E+00
6,6E-01
1,2E-01
2,9E-02
4,8E-03
6,9E-04
0,15
0,25
0,71
0,88
0,61
0,73
0,26
0,33
0,22
0,26
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Revision: 3
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