V23990-K201-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 6
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
0,5
0,4
0,3
0,2
0,1
0
0,5
0,4
0,3
0,2
0,1
0
Eon High T
Eon High T
Eon Low T
Eon Low T
Eoff High T
Eoff Low T
Eoff High T
Eoff Low T
I C (A)
R G ( Ω )
270
0
2
4
6
8
10
12
0
90
180
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
V
A
25/125
25/125
VCE
VGE
=
=
VCE
VGE
IC =
=
=
300
15
300
15
6
V
Rgon
Rgoff
=
=
64
ꢀ
ꢀ
32
Figure 7
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 8
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
0,25
0,2
0,16
0,12
0,08
0,04
0
Erec
0,2
Tj = Tjmax -25°C
Tj = Tjmax -25°C
Erec
0,15
0,1
0,05
0
Erec
Tj = 25°C
Tj = 25°C
Erec
I C (A)
R G ( Ω )
270
0
2
4
6
8
10
12
0
90
180
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
V
A
25/125
25/125
VCE
VGE
=
=
VCE
VGE
IC =
=
=
300
15
300
15
6
V
Rgon
=
64
ꢀ
copyright Vincotech
5
Revision: 3