V23990-K200-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
IGBT
Figure 6
IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
4
3
2
1
0
4
3
2
1
0
Eon High T
Eon High T
Eoff High T
Eon Low T
Eoff High T
Eoff Low T
Eon Low T
Eoff Low T
I C (A)
R G ( Ω )
150
0
5
10
15
20
25
30
0
25
50
75
100
125
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
°C
25/150
25/150
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
32
V
V
۷
600
±15
15
V
V
A
Rgon
Rgoff
=
=
32
۷
Figure 7
IGBT
Figure 8
IGBT
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
1,2
1,2
Erec
1
1
Tj = Tjmax -25°C
Tj = Tjmax -25°C
Erec
0,8
0,6
0,4
0,2
0
0,8
0,6
0,4
0,2
0
Tj = 25°C
Erec
Tj = 25°C
Erec
I C (A)
R G ( Ω )
150
0
5
10
15
20
25
30
0
25
50
75
100
125
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
°C
25/150
25/150
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
32
V
V
۷
600
±15
15
V
V
A
Rgon
=
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5
Revision: 4.1
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