A0-VS122PA690M7-L750F70
A0-VP122PA690M7-L750F70T
datasheet
Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt,di rr/dt = f(I c)
di F/dt,di rr/dt = f(R g)
16000
8000
diF/dt
diF
/
dt
t
t
t
t
t
t
t
t
dirr/dt
i
i
i
i
dir r
/dt
i
i
i
i
12000
8000
4000
0
6000
4000
2000
0
0
1
2
3
4
5
6
7
8
9
0
200
600
400
600
800
1000
1200
1400
Rg on (Ω)
IC (A)
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
600
±15
685
V
V
A
25 °C
125 °C
150 °C
±15
2
:
Tj
:
Tj
VGE
R gon
=
=
=
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(V CE
)
1600
IC MAX
I
I
I
I
1400
1200
1000
800
600
400
200
0
I
I
I
I
I
I
I
I
V
V
V
V
0
200
400
600
800
1000
1200
1400
VC E (V)
At
Tj
=
175
°C
Ω
R gon =
R goff =
2
2
Ω
Copyright Vincotech
10
03 Jun. 2016 / Revision 1
VINCOTECH [ VINCOTECH ]
