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80-M006PNB010SA-K615C-0A 参数 Datasheet PDF下载

80-M006PNB010SA-K615C-0A图片预览
型号: 80-M006PNB010SA-K615C-0A
PDF下载: 下载PDF文件 查看货源
内容描述: [Solderless interconnection]
分类和应用:
文件页数/大小: 17 页 / 939 K
品牌: VINCOTECH [ VINCOTECH ]
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80ꢀM006PNB010SA*ꢀK615*  
datasheet  
Characteristic Values  
Conditions  
Value  
Typ  
Parameter  
Symbol  
Unit  
V r [V]  
I C [A]  
or  
V GE [V]  
or  
or  
V CE [V] I F [A]  
T j [°C]  
Min  
Max  
V GS [V]  
or or  
V DS [V] I D [A]  
Rectifier Diode  
25  
125  
25  
125  
25  
125  
25  
1,43  
1,44  
0,92  
0,79  
20,29  
26,11  
1,64  
0,05  
V F  
V to  
r t  
Forward voltage  
25  
V
V
Threshold voltage (for power loss calc. only)  
Slope resistance (for power loss calc. only)  
Reverse current  
25  
25  
mꢁ  
mA  
I r  
1500  
125  
Thermal grease  
thickness≤50um  
λ = 1 W/mK  
R th(j-s)  
Thermal resistance junction to sink  
1,5  
K/W  
Inverter Switch  
Gate emitter threshold voltage  
Collectorꢀemitter saturation voltage  
Collectorꢀemitter cutꢀoff current incl. Diode  
Gateꢀemitter leakage current  
Integrated Gate resistor  
Turnꢀon delay time  
25  
150  
25  
150  
25  
150  
25  
5
5,8  
6,5  
1,99  
V GE(th)  
V CEsat  
I CES  
I GES  
R gint  
t d(on)  
t r  
V CE=V GE  
0,00015  
V
V
1,19  
1,64  
1,89  
15  
0
10  
0,0006  
300  
600  
0
mA  
nA  
20  
150  
none  
25  
150  
25  
150  
25  
150  
25  
150  
25  
150  
25  
90  
91  
22  
Rise time  
25  
ns  
133  
156  
120  
144  
0,26  
0,38  
0,26  
0,34  
t d(off)  
t f  
Turnꢀoff delay time  
R goff = 32 ꢁ  
R gon = 32 ꢁ  
±15  
300  
10  
Fall time  
E on  
Turnꢀon energy loss  
mWs  
pF  
E off  
C ies  
C oss  
C rss  
Q G  
Turnꢀoff energy loss  
150  
Input capacitance  
551  
40  
Output capacitance  
f = 1 MHz  
0
25  
25  
25  
Reverse transfer capacitance  
Gate charge  
17  
±15  
55  
62  
nC  
Thermal grease  
thickness≤50um  
λ = 1 W/mK  
R th(j-s)  
Thermal resistance junction to sink  
2
K/W  
Inverter Diode  
25  
150  
25  
150  
25  
150  
25  
150  
25  
150  
25  
1,39  
1,32  
6,77  
9,87  
233  
V F  
I RRM  
Diode forward voltage  
10  
10  
V
A
Peak reverse recovery current  
Reverse recovery time  
t rr  
ns  
352  
0,66  
1,46  
105  
109  
0,13  
0,30  
Q rr  
R gon = 32 ꢁ  
Reverse recovered charge  
Peak rate of fall of recovery current  
Reverse recovered energy  
±15  
300  
µC  
( di rf/dt )max  
E rec  
A/µs  
mWs  
150  
Thermal grease  
thickness≤50um  
λ = 1 W/mK  
R th(j-s)  
Thermal resistance junction to sink  
2,5  
K/W  
Thermistor  
Rated resistance  
Deviation of R  
R100  
R
25  
1000  
%
R 25 = 1000 ꢁ  
R 100 = 1670 ꢁ  
25  
100  
ꢀ3  
ꢀ2  
3
2
Δ R/R  
R 100  
25  
1670  
0,76  
Temperature coefficient  
Aꢀvalue  
% /K  
1/K  
1/K²  
7,635*10ꢀ3  
1,731*10ꢀ5  
B (25/50)  
25  
25  
B (25/100)  
Bꢀvalue  
Vincotech PTC Reference  
E
copyright Vincotech  
3
12 Jan. 2016 / Revision 3