10-PZ124PA032ME03-L629F98Y
datasheet
H-Bridge Switch Characteristics
figure 1.
MOSFET
figure 2.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
125
100
VGS
:
-20 V
-18 V
-16 V
-14 V
-12 V
-10 V
-8 V
-6 V
-4 V
-2 V
0 V
100
75
50
25
0
50
0
2 V
4 V
-50
-100
-150
6 V
8 V
10 V
12 V
14 V
16 V
18 V
20 V
0
1
2
3
4
5
6
7
8
-10,0 -7,5
-5,0 -2,5
0,0
2,5
5,0
7,5
10,0 12,5
V
DS(V)
VDS(V)
tp
=
=
tp
=
250
14
μs
V
250
150
μs
°C
25 °C
VGS
Tj =
125 °C
150 °C
Tj:
VGS from -20 V to 20 V in steps of 2 V
figure 3.
MOSFET
figure 4.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
1
70
10
60
50
40
30
20
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
2
4
6
8
10
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
1,362
25 °C
VDS
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
MOSFET thermal model values
R (K/W)
τ (s)
7,53E-02
2,27E-01
7,32E-01
2,40E-01
8,78E-02
2,27E+00
2,80E-01
6,31E-02
7,73E-03
7,83E-04
Copyright Vincotech
6
04 Sep. 2020 / Revision 1
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