10-FY12NMA160SH-M420F
10-PY12NMA160SH-M420FY
preliminary datasheet
Half bridge
half bridge IGBT and Neutral Point FWD
Figure 17
NP FWD
Figure 18
NP FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
Typical rate of fall of forward
and reverse recovery current as a
function of JFET turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
14000
12000
10000
8000
30000
dI0/dtLow
dI0/dtHigh
T
T
dIrec/dtLow T
dIrec/dtLow
dIrec/dtHigh
T
T
25000
20000
15000
10000
5000
dIo/dtLow T
6000
4000
dIrec/dtHigh T
di0/dtHigh T
2000
0
0
0
I C (A)
R gon ( Ω)
0
40
80
120
160
200
4
8
12
16
20
At
At
Tj =
VCE
VGE
Tj =
25/125
350
±15
4
°C
V
25/125
350
°C
V
A
V
=
=
VR =
IF =
VGE
V
100
Rgon
=
=
ꢀ
±15
Figure 19
IGBT
Figure 20
NP FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
10-1
10-2
10-3
10-1
10-2
10-3
D = 0,5
0,2
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
0,1
0,05
0,02
0,01
0,005
0.000
10-5
10-4
10-3
10-2
10-1
100
101
10-5
10-4
10-3
10-2
10-1
100
101
t p (s)
t p (s)
At
At
tp / T
0,37
tp / T
1,05
D =
D =
R
thJH
=
RthJH =
K/W
K/W
IGBT thermal model values
FWD thermal model values
R (C/W)
0,06
Tau (s)
2,4E+00
4,0E-01
1,0E-01
1,3E-02
8,4E-04
R (C/W)
0,05
Tau (s)
7,4E+00
1,3E+00
2,7E-01
4,0E-02
5,1E-03
6,0E-04
0,15
0,27
0,12
0,55
0,03
0,11
0,01
0,04
0,03
copyright Vincotech
10
Revision: 2
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