FZ06NRA045FH01
preliminary datasheet
Buck
Figure 17
FRED
Figure 18
FRED
Typical rate of fall of forward and reverse recovery current
as a function of collector current
dI0/dt,dIrec/dt = f(Ic)
Typical rate of fall of forward and reverse recovery current
as a function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
25000
20000
15000
30000
dIrec/dtLow T
dIrec/dtLow T
25000
20000
15000
10000
5000
0
dIrec/dtHigh T
dIrec/dtHigh T
10000
5000
0
dIo/dtLow T
di0/dtHigh T
dI0/dtHigh T
dI0/dtLow T
I C (A)
R gon (W)
0
10
20
30
40
50
60
0
8
16
24
32
40
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/125
°C
V
25/125
°C
V
=
=
350
15
8
350
30
V
A
Rgon
=
VGE
=
Ω
15
V
Figure 19
MOSFET
Figure 20
FRED
IGBT transient thermal impedance as a function of pulse width
FRED transient thermal impedance as a function of pulse width
ZthJH = f(tp)
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
0,1
10-1
10-1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-2
10-4
10-3
10-2
10-1
100
1011
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
1011
At
D =
RthJH =
At
tp / T
0,56
tp / T
1,95
D =
RthJH
=
K/W
K/W
IGBT thermal model values
FRED thermal model values
R (C/W)
0,04
Tau (s)
R (C/W)
0,06
Tau (s)
8,6E+00
1,4E+00
2,2E-01
3,6E-02
5,0E-03
2,6E-04
7,9E+00
1,0E+00
1,4E-01
3,1E-02
3,7E-03
5,7E-04
0,13
0,24
0,23
0,90
0,09
0,50
0,03
0,17
0,05
0,09
copyright Vincotech
9
Revision: 2
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