10-FZ062TA099FH-P980D18/-FH01-P980D28
datasheet
PFC
Figure 13
PFC FWD
Figure 14
PFC FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q rr = f(R gon
)
0,200
0,150
0,160
0,120
0,090
0,060
0,030
Qrr
Qrr
Qrr
Qrr
Tj = 25°C
0,120
Tj = 25°C
Tj = Tjmax - 25°C
0,080
Tj = Tjmax -25°C
0,040
0,000
0,000
0
I
C (A)
R gon( Ω)
0
5
10
15
20
25
30
3
6
9
12
15
18
At
T j =
T j =
V R =
I F =
25/125
400
10
°C
25/125
400
15
°C
V
V CE
V GE
R gon
=
V
V
Ω
=
A
=
4
V GS
=
10
V
Figure 15
PFC FWD
Figure 16
PFC FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I RRM = f(R gon
)
30
35
Tj = 25°C
IRRM
IRRM
30
25
25
IRRM
Tj = Tjmax - 25°C
IRRM
20
15
10
5
20
15
10
5
Tj = 25°C
Tj = Tjmax -25°C
0
0
0
3
6
9
12
15
18
I C (A)
30
R go n( Ω )
0
5
10
15
20
25
T j =
T j =
25/125
400
10
°C
25/125
400
15
°C
V
V CE
V GE
=
=
V R =
V
V
Ω
I F
=
A
R gon
=
V GS =
4
10
V
copyright Vincotech
9
10 Febr. 2015 / Revision 4