10-FZ062TA040FB-P984D18/-FB01-P984D28/-FB02-P984D38/-FB03-P984D48
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
VCE [V] or
IF [A] or
ID [A]
Tj
Min
Max
VGS [V]
VDS [V]
C.T. Inverse diode
Tj=25°C
Tj=125°C
1.66
1.61
VF
Diode forward voltage
V
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
5.12
K/W
PFC Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
2.52
1.81
2.8
VF
Irm
Forward voltage
30
30
V
μA
100
Reverse leakage current
Peak recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovered energy
Peak rate of fall of recovery current
600
400
37.632
59.961
12.6
IRRM
trr
A
ns
23
0.2238
0.7628
0.0115
0.1151
16814
11387
Qrr
Erec
Rgoff=8Ω
15
μC
mWs
A/μs
di(rec)max
/dt
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
1.88
K/W
PFC Shunt
4.7
5
5.3
R1 value
R
tc
mΩ
ppm/K
K/W
< 50
< 6.5
< 3
Temperature coeficient
Internal heat resistance
Inductance
20°C to 60°C
Rthi
L
nH
DC link Capacitor
C value
C
480
540
22
600
nF
Thermistor
Rated resistance
Deviation of R100
Power dissipation
R
Tj=25°C
Tj=100°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
kΩ
%
ΔR/R R25=22 KΩ
-5
5
P
210
mW
mW/K
K
Power dissipation
constant
3.5
B(25/50)
B-value
Tol. ±3%
Tol. ±3%
3940
4000
B(25/100)
B-value
K
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Revision: 2
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