10-FY12NMA160SH-M420F
10-PY12NMA160SH-M420FY
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
VGE [V] or
VGS [V]
Tj
Min
Max
Halfbridge IGBT Inverse Diode
Forward voltage
Tj=25°C
Tj=125°C
1
1,97
1,65
3,4
Vf
7
V
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
RthJC
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
2,24
K/W
1,48
Halfbridge IGBT
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
1
5,8
6,5
2,5
1
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(ON)
tr
VCE=VGE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
0,004
160
V
V
2,02
2,37
15
0
1200
0
mA
nA
ꢀ
2400
20
none
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
133
135
20
Turn-on delay time
Rise time
23
ns
225
276
38
td(OFF)
tf
Turn-off delay time
Rgoff=4 ꢀ
±15
350
100
Rgon=4 ꢀ
Fall time
64
1,80
3,18
2,52
4,03
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
9320
Coss
Crss
QGate
RthJH
RthJC
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
600
Reverse transfer capacitance
Gate charge
520
15
960
160
740
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
*additional value stands for built-in capacitor
0,37
0,24
K/W
NP Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,4
1,47
1,29
127
151
40
2
VF
IRRM
trr
Diode forward voltage
120
100
V
A
Peak reverse recovery current
Reverse recovery time
ns
81
3,02
7,13
12386
3767
0,31
1,01
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Rgon=4 ꢀ
±15
350
µC
di(rec)max
/dt
A/µs
mWs
Erec
RthJH
RthJC
Thermal grease
thickness≤50um
λ = 1 W/mK
1,05
K/W
0,69
copyright Vincotech
4
Revision: 2
VINCOTECH [ VINCOTECH ]
