10-FY07BIA050SM-M523E38
10-PY07BIA050SM-M523E38Y
target datasheet
Conditions
Parameter
Symbol
Value
Unit
In. Boost Diode
Peak Repetitive Reverse Voltage
650
33
V
A
VRRM
I F
Continuous (direct) forward current
Repetitive peak forward current
Power dissipation
Tj=Tjmax
TS=80°C
IFRM
Ptot
Tjmax
90
A
=
=80°C
TS
62
W
°C
Tj Tjmax
Maximum Junction Temperature
175
Conditions
Parameter
Symbol
Value
Unit
In. Boost Inverse Diode
Peak Repetitive Reverse Voltage
650
17
V
A
VRRM
I F
I FRM
Ptot
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80°C
20
A
=
= 80°C
Ts
33
W
°C
Tj Tjmax
Maximum Junction Temperature
Tjmax
175
Conditions
Parameter
Symbol
Value
Unit
Bypass Diode
Peak Repetitive Reverse Voltage
1600
48
V
A
A
VRRM
I F
Continuous (direct) forward current
Surge (nonꢀrepetitive) forward current
Surge current capability
Tj = Tjmax
T
h = 80°C
IFSM
50 Hz Single Half Sine Wave
270
370
60
Tj = 150°C
I2
t
A2s
W
tp = 10 ms
Total power dissipation
=
= 80°C
Th
Ptot
Tj Tjmax
Maximum Junction Temperature
Tjmax
150
°C
Copyright Vincotech
2
19 Okt. 2015 / Revision 1