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10-FU073AA030SM-PF04H06 参数 Datasheet PDF下载

10-FU073AA030SM-PF04H06图片预览
型号: 10-FU073AA030SM-PF04H06
PDF下载: 下载PDF文件 查看货源
内容描述: [High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge]
分类和应用:
文件页数/大小: 33 页 / 8977 K
品牌: VINCOTECH [ VINCOTECH ]
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10-FU073AA030SM-PF04H06  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Positive Boost Diode  
VRRM  
Peak repetitive reverse voltage  
600  
38  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Surge (non-repetitive) forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
IFRM  
IFSM  
Ptot  
tp limited by Tjmax  
60  
A
Single Half Sine Wave,  
tp = 10 ms  
Tj = 25 °C  
Ts = 80 °C  
330  
45  
A
Tj = Tjmax  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Negative Neutral Point Diode  
VRRM  
Peak repetitive reverse voltage  
Forward current (DC current)  
Surge (non-repetitive) forward current  
Surge current capability  
1600  
31  
V
A
IF  
Tj = Tjmax  
Ts = 80 °C  
Tj = 150 °C  
Ts = 80 °C  
IFSM  
I2t  
200  
200  
37  
A
Single Half Sine Wave,  
tp = 10 ms  
A2s  
W
°C  
Ptot  
Total power dissipation  
Tj = Tjmax  
Tjmax  
Maximum junction temperature  
150  
Positive Neutral Point Diode  
VRRM  
Peak repetitive reverse voltage  
Forward current (DC current)  
Surge (non-repetitive) forward current  
Surge current capability  
1600  
31  
V
A
IF  
Tj = Tjmax  
Ts = 80 °C  
Tj = 150 °C  
Ts = 80 °C  
IFSM  
I2t  
200  
200  
37  
A
Single Half Sine Wave,  
tp = 10 ms  
A2s  
W
°C  
Ptot  
Total power dissipation  
Tj = Tjmax  
Tjmax  
Maximum junction temperature  
150  
Copyright Vincotech  
3
11 Jul. 2022 / Revision 1  
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