10-F124NIB150SH02-LA18F08
10-F124NIC150SH02-LA28F08
target datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Switch / Boost Switch
Static
VGE(th)
VCEsat
ICES
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VGE
=
VCE
0,0052
150
25
25
25
25
5,3
5,8
6,3
2,42
2
V
V
15
0
1,78
2,05
1200
0
µA
nA
Ω
IGES
rg
20
240
none
8800
470
Cies
f
= 1 MHz
0
25
25
pF
Cres
Reverse transfer capacitance
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
0,39
K/W
Buck Diode
Static
25
2,17
2,11
2,49
VF
Ir
Forward voltage
150
V
150
25
240
Reverse leakage current
1200
µA
150
28000
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
0,50
K/W
Boost Diode Protection
Static
25
2,30
2,29
2,62
VF
Ir
Forward voltage
35
V
150
25
150
60
5500
Reverse leakage current
1200
µA
Thermal
phase-change
material
λ = 3,4 W/mK
Thermal resistance junction to sink
Rth(j-s)
1,30
K/W
Copyright Vincotech
4
25 Jul. 2016 / Revision 1
VINCOTECH [ VINCOTECH ]
