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10-F112M3A025SH-M746F09 参数 Datasheet PDF下载

10-F112M3A025SH-M746F09图片预览
型号: 10-F112M3A025SH-M746F09
PDF下载: 下载PDF文件 查看货源
内容描述: [3 phase mixed voltage component topology]
分类和应用:
文件页数/大小: 26 页 / 1206 K
品牌: VINCOTECH [ VINCOTECH ]
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10-F112M3A025SH-M746F09  
10-FY12M3A025SH-M746F08  
datasheet  
Characteristic Values  
Conditions  
Value  
Typ  
Parameter  
Symbol  
Unit  
Vr [V] or  
VGE [V] or  
IC [A] or  
IF [A] or  
VCE [V] or  
Tj  
Min  
Max  
VGS [V]  
VDS [V]  
ID [A]  
Neutral P. IGBT (T2,T3,T6,T7,T10,T11)  
Gate emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off incl diode  
Gate-emitter leakage current  
Integrated Gate resistor  
Turn-on delay time  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
5
5,8  
6,5  
1,9  
VGE(th)  
VCE(sat)  
ICES  
IGES  
Rgint  
td(on)  
tr  
VCE=VGE  
0,0012  
20  
V
V
1,1  
1,53  
1,70  
15  
0
0,0011  
300  
600  
0
mA  
nA  
20  
none  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
72  
74  
14  
Rise time  
16  
ns  
131  
157  
34  
td(off)  
tf  
Turn-off delay time  
Rgoff=16 Ω  
Rgon=16 Ω  
±15  
350  
15  
Fall time  
69  
0,31  
0,39  
0,38  
0,53  
Eon  
Turn-on energy loss per pulse  
Turn-off energy loss per pulse  
Input capacitance  
mWs  
pF  
Eoff  
Cies  
Coss  
Crss  
QGate  
1100  
Output capacitance  
f=1MHz  
0
25  
Tj=25°C  
Tj=25°C  
71  
Reverse transfer capacitance  
Gate charge  
32  
15  
480  
20  
120  
nC  
Thermal grease  
thickness50um  
λ = 1 W/mK  
RthJH  
K/W  
Thermal resistance chip to heatsink per chip  
3,09  
Half Bridge FWD (D1,D4,D5,D8,D9,D12)  
Diode forward voltage  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
2,18  
2,30  
2,65  
60  
VF  
Ir  
8
V
µA  
Reverse leakage current  
1200  
350  
21  
24  
29,9  
34,7  
0,7  
IRRM  
trr  
Peak reverse recovery current  
Reverse recovery time  
A
ns  
Qrr  
Reverse recovered charge  
Peak rate of fall of recovery current  
Reverse recovery energy  
Rgon=16 Ω  
±15  
15  
µC  
1,5  
di(rec)max  
/dt  
1972  
2214  
0,14  
0,38  
A/µs  
mWs  
Erec  
Thermal grease  
thickness50um  
λ = 1 W/mK  
RthJH  
Thermal resistance chip to heatsink per chip  
3,65  
K/W  
Thermistor  
Rated resistance  
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
R
R/R  
P
T=25°C  
T=100°C  
T=25°C  
T=25°C  
T=25°C  
T=25°C  
21511  
%
R100=1486 Ω  
-4,5  
+4,5  
210  
3,5  
mW  
mW/K  
K
B(25/50)  
3884  
3964  
B-value  
B(25/100)  
K
Vincotech NTC Reference  
F
copyright Vincotech  
4
2014.12.18. / Revision: 3