10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Half Bridge
Half Bridge IGBT & Neutral Point FWD
Figure 25
IGBT
Figure 26
IGBT
Gate voltage vs Gate charge
Safe operating area as a function
of collector-emitter voltage
IC = f(VCE
)
VGE = f(Qg)
20
103
18
16
14
12
10
8
240V
102
960V
100uS
1mS
10mS
101
100
10-1
100mS
DC
6
4
2
0
0
25
50
75
100
125
150
175
Q g (nC)
100
VCE (V)
102
103
101
At
At
IC
=
D =
Th =
0
A
single pulse
80
ºC
V
VGE
Tj =
=
±15
Tjmax
ºC
copyright Vincotech
11
2014.12.18. / Revision: 3