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10-F0122PA150SC-P990F09 参数 Datasheet PDF下载

10-F0122PA150SC-P990F09图片预览
型号: 10-F0122PA150SC-P990F09
PDF下载: 下载PDF文件 查看货源
内容描述: [Insulated Gate Bipolar Transistor]
分类和应用:
文件页数/大小: 15 页 / 379 K
品牌: VINCOTECH [ VINCOTECH ]
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FZ12 / F0122PA150SC  
preliminary datasheet  
Output Inverter  
Figure 5  
Output inverter IGBT  
Figure 6  
Output inverter IGBT  
Typical switching energy losses  
as a function of collector current  
E = f(IC)  
Typical switching energy losses  
as a function of gate resistor  
E = f(RG)  
30  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
Eon High T  
Eon High T  
Eoff High T  
Eoff Low T  
Eon Low T  
Eon Low T  
Eoff High T  
Eoff Low T  
0
0
I
C (A)  
R G ( Ω )  
0
50  
100  
150  
200  
250  
300  
0
2
4
6
8
10  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
°C  
°C  
V
25/150  
25/150  
VCE  
VGE  
=
=
VCE  
VGE  
IC =  
=
=
600  
±15  
2
V
V
600  
±15  
150  
V
Rgon  
Rgoff  
=
=
A
2
Figure 7  
Output inverter IGBT  
Figure 8  
Output inverter IGBT  
Typical reverse recovery energy loss  
as a function of collector current  
Typical reverse recovery energy loss  
as a function of gate resistor  
Erec = f(RG)  
Erec = f(IC)  
15  
15  
Erec  
12  
9
12  
Erec  
Tj = Tjmax -25°C  
Tj = Tjmax -25°C  
9
6
3
0
Tj = 25°C  
Erec  
6
Tj = 25°C  
Erec  
3
0
0
I C (A)  
R G ( Ω )  
50  
100  
150  
200  
250  
300  
0
2
4
6
8
10  
With an inductive load at  
With an inductive load at  
Tj =  
VCE  
VGE  
Tj =  
VCE  
VGE  
IC =  
25/150  
600  
±15  
2
°C  
V
25/150  
600  
°C  
V
=
=
=
=
V
±15  
V
Rgon  
=
150  
A
copyright Vincotech  
5
Revision: 1