10-FZ062TA030(FB/FB01/FB02/FB03)-P983(D18/D28/D38/D48)
10-F0062TA030(FB/FB03)-P983(D19/D49)
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
Input Rectifier Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
1,16
1,11
0,9
0,77
9
1,4
VF
Vto
rt
Forward voltage
30
30
30
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
mꢀ
mA
12
0,02
2
Ir
1500
Thermal grease
thickness≤50um
λ =1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
1,72
K/W
Input Rectifier Thyristor
Forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
1,25
1,22
0,93
0,82
0,011
0,014
1,6
VF
Vto
30
30
30
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
rt
mꢀ
mA
µs
0,05
2
2
Ir
800
Ig=0,5A
dig/dt=0,5A/us
Ig=0,2A
tGD
Gate controlled delay time
Gate controlled rise time
Critical rate of rise of off-state voltage
Critical rate of rise of on-state current
Circuit commutated turn-off time
Holding current
VD=1/2Vdrm
Tj=25°C
Tj=125°C
Tj=125°C
Tj=125°C
Tj=25°C
Tj=25°C
<1
tGR
µs
dig/dt=0,2A/us
500
150
(dv/dt)cr
(di/dt)cr
tq
VD=2/3Vdrm
V/µs
A/µs
µs
Ig=0,2A
f=50Hz
VD=2/3Vdrm
tp=200us
VD=6V
VD=2/3Vdrm40
150
100
26
50
90
IH
mA
mA
V
tp=10us
Ig=0,2A
VD=6V
IL
Latching current
Tj=25°C
Tj=-40°C
Tj=25°C
Tj=-40°C
Tj=125°C
1,3
1,6
28
50
0,2
VGT
IGT
VGD
IGD
Gate trigger voltage
VD=6V
11
Gate trigger current
mA
V
Gate non-trigger voltage
Gate non-trigger current
VD=1/2Vdrm
VD=1/2Vdrm
Tj=125°C
1
mA
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
1,57
4
K/W
PFC IGBT
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
3
5
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Vce
0,0005
30
V
V
2,89
3,43
3,3
30
0,2
0
600
0
mA
nA
ꢀ
3,43
20
n.a.
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
15,8
15,4
6,4
Rise time
7,4
ns
107,6
120,4
4,2
td(off)
tf
Turn-off delay time
Rgoff=2ꢀ
Rgon=2ꢀ
15
400
18
Fall time
6,6
0,2197
0,4012
0,1983
0,3086
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
1500
150
92
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
15
480
30
92
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
1,22
K/W
Copyright by Vincotech
3
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