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10-FZ062PA100SA-P994F08 参数 Datasheet PDF下载

10-FZ062PA100SA-P994F08图片预览
型号: 10-FZ062PA100SA-P994F08
PDF下载: 下载PDF文件 查看货源
内容描述: [Insulated Gate Bipolar Transistor]
分类和应用:
文件页数/大小: 15 页 / 373 K
品牌: VINCOTECH [ VINCOTECH ]
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FZ06 / F0062PA100SA
preliminary datasheet
flowPHASE0
Features
Trench Fieldstop IGBT technology
2-clip housing in 12mm and 17mm height
Compact and low inductance design
3
600V/100A
flow0 housing
Target Applications
Motor Drive
UPS
Schematic
Types
FZ062PA100SA
F0062PA100SA
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
V
CE
I
C
I
Cpulse
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°C
V
GE
=15V
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
77
101
300
127
192
±20
6
360
175
V
A
A
W
V
μs
V
°C
Inverter Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=25°C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
64
86
300
82
124
175
V
A
A
W
°C
copyright Vincotech
1
Revision: 1