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BCM4414VD1E2663C02 参数 Datasheet PDF下载

BCM4414VD1E2663C02图片预览
型号: BCM4414VD1E2663C02
PDF下载: 下载PDF文件 查看货源
内容描述: [Isolated Fixed-Ratio DC-DC Converter]
分类和应用:
文件页数/大小: 43 页 / 1457 K
品牌: VICOR [ VICOR CORPORATION ]
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BCM4414xD1E2663yzz  
BCM in a VIA Package  
IHI  
ILO  
RLO  
+
+
V•I  
K
K ILO  
K VHI  
+
+
VHI  
VLO  
IHI_Q  
Figure 19 — BCM DC model (Forward Direction)  
The BCM uses a high frequency resonant tank to move energy  
from the high voltage side to the low voltage side and vice versa.  
The resonant LC tank, operated at high frequency, is amplitude  
modulated as a function of the HI side voltage and the LO side  
current. A small amount of capacitance embedded in the high  
voltage side and low voltage side stages of the module is sufficient  
for full functionality and is key to achieving high power density.  
The effective DC voltage transformer action provides additional  
interesting attributes. Assuming that RLO = 0Ω and IHI_Q = 0A,  
Equation 3 now becomes Equation 1 and is essentially load  
independent, resistor R is now placed in series with VHI.  
The BCM4414xD1E2663yzz can be simplified into the model shown  
in Figure 19.  
R
BCM  
V
LO
+
K = 1/16  
At no load:  
VHI  
VLO = VHI • K  
(1)  
K represents the “turns ratio” of the BCM.  
Rearranging Eq (1):  
Figure 20 — K = 1/16 BCM with series HI side resistor  
VLO  
K =  
The relationship between VHI and VLO becomes:  
(2)  
VHI  
V = V – I • R • K  
(5)  
(
)
LO  
HI  
HI  
In the presence of a load, VLO is represented by:  
Substituting the simplified version of Equation 4  
(IHI_Q is assumed = 0A) into Equation 5 yields:  
VLO = VHI • K – ILO • RLO  
(3)  
VLO = VHI • K – ILO • R • K2  
(6)  
and ILO is represented by:  
This is similar in form to Equation 3, where RLO is used to represent  
the characteristic impedance of the BCM. However, in this case a  
real resistor, R, on the high voltage side of the BCM is effectively  
scaled by K2 with respect to the low voltage side.  
IHI – IHI_Q  
(4)  
ILO  
=
K
RLO represents the impedance of the BCM and is a function of the  
RDS_ON of the HI side and LO side MOSFETs, PC board resistance of  
HI side and LO side boards and the winding resistance of the power  
transformer. IHI_Q represents the HI side quiescent current of the  
BCM controller, gate drive circuitry and core losses.  
Assuming that R = 1Ω, the effective R as seen from the low voltage  
side is 3.91mΩ, with K = 1/16.  
BCM® in a VIA Package  
Page 19 of 43  
Rev 1.1  
01/2018  
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