SMBG5.0 thru SMG188CA
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient
Typical thermal resistance, junction to lead
SYMBOL
R
θJA
R
θJL
VALUE
100
20
UNIT
°C/W
°C/W
ORDERING INFORMATION
PREFERRED P/N
SMBG5.0A-E3/52
SMBG5.0A-E3/5B
UNIT WEIGHT (g)
0.096
0.096
PREFERRED PACKAGE CODE
52
5B
BASE QUANTITY
750
3200
DELIVERY MODE
7" Diameter Plastic Tape & Reel
13" Diameter Plastic Tape & Reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
°C
unless otherwise noted)
100
150
T
j
= 25 °C
Pulse
Width
(td)
is defined as the point
where
the peak current
decays to 50
%
of I
PPM
I
PPM
- Peak Pulse Current,
%
I
RSM
P
PPM
- Peak Pulse Power (kW)
tr = 10
µsec
Peak
Value
I
PPM
10
100
Half
Value
- IPP
2
I
PPM
50
10/1000
µsec Waveform
as defined
by
R.E.A.
1
0.2 x 0.2" (0.5 x 0.5 mm)
Copper Pad Areas
0.1
0.1
µs
td
0
0
1.0
2.0
3.0
4.0
1.0
µs
10
µs
100
µs
1.0 ms
10 ms
td - Pulse
Width
(s)
t - Time (ms)
Figure 1. Peak Pulse Power Rating Curve
Figure 3. Pulse Waveform
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage,
%
100
6000
75
C
J
- Junction Capacitance (pF)
Measured at
Zero Bias
1000
50
100
25
V
R
, Measured at
Stand-off
Voltage V
WM
Uni-Directional
Bi-Directional
T
j
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
100
200
0
0
25
50
75
100
125
150
175
200
10
1
10
T
J
- Initial Temperature (°C)
V
WM
- Reverse Stand-off
Voltage
(V)
Figure 2. Pulse Power or Current versus Initial Junction Temperature
Figure 4. Typical Junction Capacitance
www.vishay.com
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Document Number 88456
05-Jul-06
VAISH [ VAISHALI SEMICONDUCTOR ]
