LS4148/LS4448
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
I
F
= 5 mA
I
F
= 50 mA
I
F
= 100 mA
Reverse current
V
R
= 20 V
V
R
= 20 V, T
j
= 150 °C
V
R
= 75 V
Breakdown voltage
Diode capacitance
Rectification efficiency
Reverse recovery time
I
R
= 100 µA, t
p
/T = 0.01,
t
p
= 0.3 ms
V
R
= 0, f = 1 MHz, V
HF
= 50 mV
V
HF
= 2 V, f = 100 MHz
I
F
= I
R
= 10 mA, i
R
= 1 mA
I
F
= 10 mA, V
R
= 6 V,
i
R
= 0.1 x I
R
, R
L
= 100
Ω
Part
LS4448
LS4148
LS4448
Symbol
V
F
V
F
V
F
I
R
I
R
I
R
V
(BR)
C
D
η
r
t
rr
t
rr
45
8
4
100
4
Min
620
860
930
Typ.
Max
720
1000
1000
25
50
5
Unit
mV
mV
mV
nA
µA
µA
V
pF
%
ns
ns
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
1000
LS4148
I
F
- Forward Current (mA)
1000
100
Scattering Limit
10
I
R
- Reverse Current (nA)
T
j
= 25 °C
100
Scattering Limit
10
1
T
j
= 25 °C
0
0.4
0.8
1.2
1.6
2.0
0.1
16640
1
1
94 9098
10
V
R
- Reverse
Voltage
(V)
100
V
F
- Forward
Voltage
(V)
Figure 1. Forward Current vs. Forward Voltage
Figure 3. Reverse Current vs. Reverse Voltage
1000
C
D
- Diode Capacitance (pF)
LS4448
I
F
- Forward Current (mA)
3.0
2.5
2.0
1.5
1.0
0.5
0
2.0
94 9099
100
Scattering Limit
10
f = 1 MHz
T
j
= 25 °C
1
T
j
= 25 °C
0.1
0
0.4
0.8
1.2
1.6
0.1
1
10
100
16642
V
F
- Forward
Voltage
(V)
V
R
- Reverse
Voltage
(V)
Figure 2. Forward Current vs. Forward Voltage
Figure 4. Diode Capacitance vs. Reverse Voltage
www.vishay.com
2
Document Number 85561
Rev. 1.8, 04-May-07
VAISH [ VAISHALI SEMICONDUCTOR ]
