G2SB20 thru G2SB80
New Product
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Single-Phase
Bridge Rectifier
Case Type GBL
0.125 (3.17)
x 45 degrees
Chamfer
0.825 (20.9)
0.815 (20.7)
Reverse Voltage
200 to 800V
Forward Current
1.5A
Features
0.421 (10.7)
0.411 (10.4)
0.080 (2.03)
0.060 (1.50)
0.095 (2.41)
0.080 (2.03)
0.098 (2.5)
0.075 (1.9)
0.043 (1.1)
0.035 (0.9)
0.210 (5.3)
0.190 (4.8)
0.040 (1.02)
0.030 (0.76)
0.022 (0.56)
0.018 (0.46)
0.098 (2.5)
0.075 (1.9)
0.718 (18.2)
0.682 (17.3)
Lead Depth
0.022 (0.56)
0.018 (0.46)
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• This series is UL listed under the Recognized
Component Index, file number E54214
• High case dielectric strength
• Ideal for printed circuit boards
• Glass passivated chip junction
• High surge current capability
• High temperature soldering guaranteed:
260°C/10 seconds, 0.375 (9.5mm) lead length,
5lbs. (2.3kg) tension
Mechanical Data
0.140 (3.56)
0.128 (3.25)
Polarity shown on front side of case, positive lead beveled corner.
Dimensions in inches and (millimeters)
Case:
Molded plastic body over passivated junctions
Terminals:
Plated leads solderable per MIL-STD-750,
Method 2026
Mounting Position:
Any
Weight:
0.071 oz., 2.0 g
Packaging codes/options:
1/400 EA. per Bulk Tray Stack, 4K/box
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum Ratings & Thermal Characteristics
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward
rectified output current at T
A
= 25°C
Peak forward surge current single
sine-wave superimposed on rated load (JEDEC Method)
Rating for fusing (t<8.3ms)
Typical thermal resistance per leg
Operating junction storage and temperature range
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
R
θJA
R
θJL
T
J,
T
STG
G2SB20
200
140
200
G2SB60
600
420
600
1.5
80
27
40
12
–55 to +150
G2SB80
800
560
800
Unit
V
V
V
A
A
A
2
sec
°C/W
°C
Electrical Characteristics
Parameter
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol
V
F
T
A
= 25°C
T
A
=125°C
I
R
G2SB20
G2SB60
1.00
5.0
300
G2SB80
Unit
V
µA
Maximum instantaneous forward voltage
drop per leg at 0.75 A
Maximum DC reverse current at rated
DC blocking voltage per leg
Note:
(1) Unit mounted on P.C.B. with 0.5 x 0.5" (12 x 12mm) copper pads and 0.375” (9.5mm) lead length
Document Number 88603
21-Mar-02
www.vishay.com
1
VAISH [ VAISHALI SEMICONDUCTOR ]
