TIP42C
PARAMETER
Collector Base Voltage
Collector to Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
C
I
B
PNP PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATING
(unless otherwise specified )
RATINGS
UNIT
-100
V
-100
V
-5
V
-6
A
-10
A
-2
A
TO-220/TO-263
65
Collector Dissipation (T
C
=25°C)
TO-220F
P
C
22
W
TO-252
20
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-65 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
C
=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Emitter Breakdown Voltage (Note)
BV
CEO
I
C
=-30mA, I
B
=0
Collector Cutoff Current
I
CEO
V
CE
=-60V, I
B
=0
Collector Cutoff Current
I
CES
V
CE
=-100V, V
EB
=0
Emitter Cutoff Current
I
EBO
V
BE
=-5V, I
C
=0
Collector-Emitter Saturation Voltage (Note)
V
CE(SAT)
I
C
=-6A, I
B
=-600mA
Base-Emitter on Voltage (Note)
V
BE(ON)
V
CE
=-4V, I
C
=-6A,
V
CE
=-4V, I
C
=-300mA
DC Current Gain (Note)
h
FE
V
CE
=-4V, I
C
=-3A
Current Gain Bandwidth Product
f
T
V
CE
=-10V, I
C
=-500mA, f=1MHz
Note: Pulse Test: P
W
≤300μs,
Duty Cycle≤2%
MIN
-100
TYP MAX UNIT
V
-0.7 mA
-400
μA
-1
mA
-1.5
V
-2.0
V
75
MHz
30
15
3
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www.unisonic.com.tw
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