TIP32C 参数 Datasheet PDF下载

TIP32C

ABSOLUATE MAXIUM RATINGS

(Ta = 25°C)

PARAMETER

Collector-Base Voltage

Emitter-Base Voltage

SYMBOL

V

CBO

V

EBO

I

C

I

CM

I

B

PNP SILICON TRANSISTOR

RATINGS

UNIT

-100

V

-5

V

DC

-3

A

Collector Current

-5

A

PULSE

Base Current

-1

A

TO-220

2

W

Power Dissipation

P

D

TO-252

1

W

Junction Temperature

T

J

+150

°C

Storage Temperature

T

STG

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS

(Ta= 25°C, unless otherwise specified.)

PARAMETER

Collector Emitter Sustaining Voltage

(Note)

Collector Cutoff Current

Collector Cutoff Current

Emitter Cutoff current

Collector-Emitter Saturation Voltage

(Note)

Base-Emitter On Voltage*

DC Current Gain (Note)

SYMBOL

BV

CEO

I

CES

I

CEO

I

EBO

V

CE(SAT)

V

BE(ON)

h

FE

TEST CONDITIONS

I

C

=-30mA,I

B

=0

V

CE

=-100V, V

BE

=0

V

CE

=-60V, I

B

=0

V

BE

=-5V, I

C

=0

I

C

=-3A, I

B

=-375mA

I

C

=-3A, V

CE

=-4A

I

C

=-1A, V

CE

=-4V

I

C

=-3A, V

CE

=-4V

I

C

=-0.5A,V

CE

=-10V, f=1MHz

25

10

3

MIN

-100

-200

-0.3

-1

-1.2

-1.8

50

MHz

TYP

MAX

UNIT

V

μA

mA

mA

V

V

Current Gain Bandwidth Product

f

T

Note: Pulse Test: PW≤300μs, Duty Cyle≤2%

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R209-017,C