TIP31C_09 参数 Datasheet PDF下载

TIP31C

ABSOLUTE MAXIMUM RATINGS

PARAMETER

NPN EXPITAXIAL TRANSISTOR

RATINGS

UNIT

Collector-Base Voltage

100

V

Collector-Emitter Voltage

100

V

Emitter-Base Voltage

5

V

DC

3

A

Collector Current

I

C

Pulse

5

A

Base Current

I

B

1

A

TO-126

10

W

Collector Dissipation (T

C

=25°C)

P

C

TO-220

40

W

TO-252

15

W

Junction Temperature

T

J

+150

°C

Storage Temperature

T

STG

-65 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL

V

CBO

V

CEO

V

EBO

ELECTRICAL CHARACTERISTICS

(T

C

=25°C)

PARAMETER

SYMBOL

TEST CONDITIONS

Collector Emitter Sustaining Voltage (Note)

BV

CEO

I

C

=30mA, I

B

=0

Collector Cutoff Current

I

CES

V

CB

=100V, V

EB

=0

Collector Cutoff Current

I

CEO

V

CE

=60V, I

B

=0

Emitter Cutoff Current

I

EBO

V

BE

=5V, I

C

=0

Collector-Emitter Saturation Voltage (Note) V

CE(SAT)

I

C

=3A, I

B

=375mA

Base-Emitter On Voltage (Note)

V

BE(ON)

I

C

=3A, V

CE

=4V

h

FE1

I

C

=1A, V

CE

=4V

DC Current Gain (Note)

h

FE2

I

C

=3A, V

CE

=4V

Current Gain Bandwidth Product

f

T

I

C

=0.5A, V

CE

=10V f=1MHz

Note: Pulse Test: PW≤300μs, Duty Cycle≤2%

MIN

100

TYP

MAX

200

0.3

1

1.2

1.8

25

10

3

50

MHz

UNIT

V

μA

mA

mA

V

V

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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