TIP127 参数 Datasheet PDF下载

TIP127

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

PNP SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATING

(T

a

= 25°C, unless otherwise specified)

RATINGS

UNIT

100

V

100

V

5

V

5

A

TO-126

40

W

Power Dissipation

P

D

TO-220

65

W

Junction Temperature

T

J

150

°C

Operating Temperature

T

OPR

-20 ~ +85

°C

Storage Temperature

T

STG

-55 ~ +150

°C

Note: Absolute maximum ratings are the values beyond which the device will be damaged permanently.

Absolute maximum ratings are only stress ratings and it is not implied for functional device operation.

ELECTRICAL CHARACTERISTICS

PARAMETER

Collector-Emitter Breakdown Voltage

Collector Cut-Off Current

Collector-Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

DC Current Gain

(T

a

=25°C, unless otherwise specified)

TEST CONDITIONS

I

C

=100mA

V

CB

=100V

V

CE

=50V

V

EB

=5V

I

C

=3A, I

B

=12mA

I

C

=5A, I

B

=20mA

V

CE

=3V, I

C

=3A

I

C

=500mA, V

CE

=3V

I

C

=3A, V

CE

=3V

MIN TYP MAX UNIT

100

V

200 uA

500 uA

2

mA

2

V

4

V

2.5

V

1

K

SYMBOL

BV

CEO

I

CBO

I

CEO

I

EBO

V

CE(SAT)1

V

CE(SAT)2

V

BE(ON)

h

FE

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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