UTCPUMT1 PNP EPITAXIAL SILICON TRANSISTOR
The following characteristics apply to both Tr1 and Tr2
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
Ic
RATING
-50
UNIT
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
-40
V
-5
V
Collector current (DC)
Peak collector current
Peak base current
-100
-200
-200
300
mA
mA
mA
mW
℃
ICM
IBM
Collector Power Dissipation (total)
Pc
Tj
Junction temperature
150
Storage temperature
Tstg
-65~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER
SYMBOL
CONDITION
IE=0, VcB=-30V
MIN
MAX
-100
-10
UNIT
nA
μA
nA
Collector cut-off current
ICBO
IE=0, VcB=-30V, Tj=150℃
VEB=-4V, Ic=0
Emitter cut-off current
DC current gain
IEBO
hFE
-100
Ic=-1mA, VCE=-6V
120
100
Collector-emitter saturation voltage
Collector capacitance
VCE(sat)
Cc
Ic=-50mA, IB=-5mA (note 1)
IE=ie=0, VCB=-12V, f=1MHz
Ic=-2mA, VCE=-12V, f=100MHz
-200
2.2
mV
pF
MHz
Transition frequency
fT
Note:1. Pulse test: tp≤300µs, δ≤0.02
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R218-001,A
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